PBSS5130T,215 datasheet

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• Маркировка
  PBSS5130T,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS5130T,215 Collector- Emitter Voltage Vceo Max: - 30 V Configuration: Single Continuous Collector Current: - 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 300 Dc Current Gain (hfe) (min) @ Ic, Vce: 260 @ 500mA, 2V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 200MHz ID_COMPONENTS: 1949521 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 1.5 A Maximum Operating Frequency: 200 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 480mW Power Dissipation: 300 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 225mV @ 50mA, 1A Voltage - Collector Emitter Breakdown (max): 30V Other Names: 568-4346-2, 934057988215, PBSS5130T T/R
• Количество страниц
  7 шт.
• Формат
  PDF

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• Размер файла
  64,16 KB

PBSS5130T,215 datasheet скачать

PBSS5130T,215 datasheet